GROWTH METHOD FOR P-TYPE ALGAN SEMICONDUCTOR MATERIAL

Disclosed in the present invention is a growth method for a p-type AlGaN semiconductor material. The semiconductor material is grown by using a technical method of adding a "gallium source access" step in surfactant-assisted magnesium delta doping. During a growth process of the p-type AlGaN semiconductor material, ammonia or dimethyl hydrazine nitrogen is used as a source of nitrogen(V), trimethyl gallium or triethyl gallium is used as a source of gallium(III), trimethyl aluminum or triethyl aluminum is used as a source of aluminum(III), trimethyl indium or triethyl indium is used as a source of indium(III), and the foregoing are collectively referred to as a Group III metal source; trimethyl indium or triethyl indium is also used as a surfactant, and is used in an acceptor doped layer. The method of the present invention may be used to improve crystal quality, increase the doping concentration of an acceptor-doped magnesium atom, reduce acceptor ionization energy by means of enhancing the valence band modul