POLYCRYSTALLINE CHEMICAL VAPOUR DEPOSITION SYNTHETIC DIAMOND MATERIAL

Apolycrystalline CVD synthetic diamond material is provided that has an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of between 1700 and 2400 Wm-1K-1, a thickness of at least 2.5 mm and a visible transmittance through the...

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Bibliographische Detailangaben
Hauptverfasser:	WILLIAMS, Gruffudd Trefor, DODSON, Joseph Michael, BALMER, Richard Stuart
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Apolycrystalline CVD synthetic diamond material is provided that has an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of between 1700 and 2400 Wm-1K-1, a thickness of at least 2.5 mm and a visible transmittance through the thickness of the polycrystalline CVD synthetic diamond of at least 25%. A wafer comprising the material is also provided, wherein at least 70% of a total area of the wafer has the properties of the polycrystalline CVD synthetic diamond material. A method for fabricating the wafer is also disclosed. La présente invention concerne un matériau de diamant synthétique CVD polycristallin qui présente une conductivité thermique moyenne à la température ambiante à travers une épaisseur du matériau de diamant synthétique CVD polycristallin comprise entre 1 700 et 2 400 Wm-1K-1, une épaisseur d'au moins 2,5 mm et une transmittance visible à travers l'épaisseur du diamant synthétique CVD polycristallin d'au moins 25 %. L'invention concerne également une galette comprenant le matériau, où au moins 70 % d'une surface totale de la galette présente des propriétés du matériau de diamant synthétique CVD polycristallin. L'invention concerne également un procédé de fabrication de la galette.