SILICON NITRIDE FILM ETCHING COMPOSITION AND ETCHING METHOD USING SAME

The silicon nitride film etching composition of the present invention comprises a phosphoric acid compound, a polyhydric alcohol, and water. The silicon nitride film etching composition has high selectivity to a silicon nitride film relative to a silicon oxide film, and can suppress the precipitatio...

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Bibliographische Detailangaben
Hauptverfasser:	CHOI, Jung Min, KOH, Sang Ran, CHO, Youn Jin, HWANG, Ki Wook
Format:	Patent
Sprache:	eng ; fre ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The silicon nitride film etching composition of the present invention comprises a phosphoric acid compound, a polyhydric alcohol, and water. The silicon nitride film etching composition has high selectivity to a silicon nitride film relative to a silicon oxide film, and can suppress the precipitation of silicon compounds. La composition de gravure de film de nitrure de silicium de la présente invention comprend un composé d'acide phosphorique, un alcool polyhydrique et de l'eau. La composition de gravure de film de nitrure de silicium présente une sélectivité élevée vis-à-vis d'un film de nitrure de silicium par rapport à un film d'oxyde de silicium, et peut supprimer la précipitation de composés de silicium. 본 발명의 실리콘 질화막 에칭 조성물은 인산 화합물; 다가알코올; 및 물을 포함한다. 상기 실리콘 질화막 에칭 조성물은 실리콘산화막에 대한 실리콘 질화막의 선택비가 높고, 실리콘 화합물의 석출을 억제할 수 있다.