A SEMICONDUCTOR AND METHOD FOR FORMING A SEMICONDUCTOR

The present disclosure relates to a method for forming a doped semiconductor. The method comprises ionising a sputtering gas between a metallic target and a substrate using a pulsed direct current (DC), and bombarding the target with the sputtering gas in the presence of a dopant and a reactant to d...

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Bibliographische Detailangaben
Hauptverfasser:	CHAI, Jianwei, WANG, Shijie, HOU, Yinglan, JIN, Yunjiang
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present disclosure relates to a method for forming a doped semiconductor. The method comprises ionising a sputtering gas between a metallic target and a substrate using a pulsed direct current (DC), and bombarding the target with the sputtering gas in the presence of a dopant and a reactant to dislodge atoms of the target, the atoms reacting with the reactant to form a compound that is deposited onto the substrate. The method involves controlling at least one of a DC power of the pulsed DC and a DC frequency of the pulsed DC to control arc formation between the target and substrate. La présente invention concerne un procédé de formation d'un semi-conducteur dopé. Le procédé comprend l'ionisation d'un gaz de pulvérisation cathodique entre une cible métallique et un substrat à l'aide d'un courant continu (CC) pulsé, et le bombardement de la cible avec le gaz de pulvérisation cathodique en présence d'un dopant et d'un réactif en vue de déloger des atomes de la cible, les atomes réagissant avec le réactif en vue de former un composé qui est déposé sur le substrat. Le procédé consiste à commander une puissance CC du CC pulsé et/ou une fréquence CC du CC pulsé en vue de commander la formation d'arc entre la cible et le substrat.