FLOATING GATE SPACER FOR CONTROLLING A SOURCE REGION FORMATION IN A MEMORY CELL

A method is provided for forming an integrated circuit memory cell, e.g., flash memory cell. A pair of spaced-apart floating gate structures may be formed over a substrate. A non-conformal spacer layer may be formed over the structure, and may include spacer sidewall regions laterally adjacent the f...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WALLS, James, KABEER, Sajid, HYMAS, Mel
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!