CMOS HIGH TEMPERATURE REFERENCE VOLTAGE SOURCE

A CMOS high temperature reference voltage source, comprising: a reference core circuit, specifically comprising: a first PMOS tube M4, a low voltage difference linear stabilizer LDO, and a first impedance circuit and a second impedance circuit in serial connection to each other; also comprised are:...

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Bibliographische Detailangaben
Hauptverfasser: LU, Wenzheng, CHEN, Lefeng
Format: Patent
Sprache:chi ; eng ; fre
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Beschreibung
Zusammenfassung:A CMOS high temperature reference voltage source, comprising: a reference core circuit, specifically comprising: a first PMOS tube M4, a low voltage difference linear stabilizer LDO, and a first impedance circuit and a second impedance circuit in serial connection to each other; also comprised are: a third resistor R3, a fourth resistor R4, and a third impedance circuit and fourth impedance circuit in serial connection to each other; by means of the reference core circuit, a reference voltage architecture of a MOSFET and resistors are combined using binary weighting, so as to achieve a low temperature coefficient voltage reference which has a wide expansion range up to 230℃, and the architecture has high power source noise suppression, low output noise and a low operating temperature coefficient, such as -40℃-230℃, in simulations. L'invention se rapporte à une source de tension de référence à haute température CMOS, qui comprend : un circuit central de référence comportant plus particulièrement un premier tub