DEEP ULTRAVIOLET LED AND PRODUCTION METHOD FOR SAME

A deep ultraviolet LED that has a design wavelength of λ. The deep ultraviolet LED is characterized by including, in order from the side opposite a sapphire substrate, a reflecting electrode layer (Au), a metal layer (Ni), a p-type GaN contact layer, a P-Block layer that comprises a p-type AlGaN layer and has a film thickness of 52-56 nm, an i-guide layer that comprises an AlN layer, a multi quantum well layer, an n-type AlGaN contact layer, a u-type AlGaN layer, an AlN template, and the sapphire substrate. The deep ultraviolet LED is also characterized by including a reflective two-dimensional photonic crystal periodic structure that includes a plurality of holes and is provided from the interface between the metal layer and the p-type GaN contact layer within the thickness-direction range of the p-type GaN contact layer but does not cross the interface between the p-type GaN contact layer and the P-Block layer. The deep ultraviolet LED is also characterized in that the distance from sapphire-substrate-side end surfaces of the holes to the interface between the multi quantum well layer and the i-guide layer satisfies λ/2n1Dneff in the vertical direction and is 53-57 nm. The deep ultraviolet LED is also characterized in that the reflective two-dimensional photonic crystal periodic structure has photonic gaps that open toward a TE polarization component. The deep ultraviolet LED is also characterized in that the period a of the reflective two-dimensional photonic crystal periodic structure satisfies the Bragg condition with respect to light of the design wavelength λ, in that the order m of the Bragg conditional expression mλ/n2Deff=2a (m being the order, λ being the design wavelength, n2Deff being the effective refractive index of the two-dimensional photonic crystal, and a being the period of the two-dimensional photonic crystal) satisfies 2≤m≤4, and in that, when the radius of the holes is R, 0.30≤R/a≤0.40. L'invention concerne une DEL ultraviolette profonde qui a une longueur d'onde de conception de λ. La DEL ultraviolette profonde est caractérisée en ce qu'elle comprend, dans l'ordre depuis le côté opposé à un substrat de saphir, une couche d'électrode réfléchissante (Au), une couche métallique (Ni), une couche de contact de GaN de type p, une couche de Bloc P qui comprend une couche d'AlGaN de type p et ayant une épaisseur de film de 52 à 56 nm, une couche de guidage i qui comprend une couche d'AlN, une couche de puits quantique multiple, une couche d