HYBRID HIGH-VOLTAGE LOW-VOLTAGE FINFET DEVICE

An integrated circuit includes a plurality of low-voltage FinFET transistors each having a channel length l and a channel width w, the low-voltage FinFET transistors having a first threshold voltage channel implant and a first gate dielectric thickness. The integrated circuit also includes a plurali...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DHAOUI, Fethi, SINGARAJU, Pavan, MCCOLLUM, John
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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