TRENCH-TYPE FIELD EFFECT TRANSISTOR WITH IMPROVED POLYSILICON GATE CONTACT

An integrated circuit (IC) device may include a plurality of trench-type field-effect transistors (trench FETs). Each trench FET may include a poly gate trench formed in an epitaxy region, a poly gate formed in the poly gate trench, a front-side poly gate contact, and a lateral gate coupling element...

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Bibliographische Detailangaben

1. Verfasser:	DIX, Gregory
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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