METHOD OF FORMING ALUMINA FOR A ELECTROCHEMICAL CELL USING A PLASMA IONISING PROCESS

An evaporation source (102) for forming a ceramic layer of a component of an electrochemical energy storage device is provided. The evaporation source (102) includes a material source configured to evaporate a material, a gas supply configured to supply process gas, and a plasma source (108) configu...

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Bibliographische Detailangaben
Hauptverfasser:	ZHAO, Kent, DIETER, Torsten Bruno, TRASSL, Roland, DEPPISCH, Thomas, HERLE, Subramanya
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	An evaporation source (102) for forming a ceramic layer of a component of an electrochemical energy storage device is provided. The evaporation source (102) includes a material source configured to evaporate a material, a gas supply configured to supply process gas, and a plasma source (108) configured to at least partially ionize the process gas, the ceramic layer (52) being formed by at least the evaporated material and the at least partially ionized process gas. L'invention concerne une source d'évaporation (102) pour former une couche céramique d'un composant d'un dispositif de stockage d'énergie électrochimique. La source d'évaporation (102) comprend une source de matériau conçue pour évaporer un matériau, une alimentation en gaz configurée pour fournir un gaz de traitement, et une source de plasma (108) configurée pour ioniser au moins partiellement le gaz de traitement, la couche de céramique (52) étant formée par au moins le matériau évaporé et le gaz de traitement au moins partiellement ionisé.