ULTRAVIOLET LED LIGHT SOURCE FLIP CHIP STRUCTURE
Disclosed in the present invention is an ultraviolet light-emitting diode (LED) light source flip chip structure, comprising: a substrate, and a buffer and nucleation layer, a superlattice structure, a n-type conductive layer, a quantum well active region, an electron blocking layer, a p-type conduc...
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Sprache: | chi ; eng ; fre |
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Zusammenfassung: | Disclosed in the present invention is an ultraviolet light-emitting diode (LED) light source flip chip structure, comprising: a substrate, and a buffer and nucleation layer, a superlattice structure, a n-type conductive layer, a quantum well active region, an electron blocking layer, a p-type conductive layer, a current expanding layer, and a metal reflective layer, which are sequentially provided in a first direction; a first electrode groove that penetrates the metal reflective layer and part of the current expanding layer; a second electrode groove that penetrates the n-type conductive layer, the quantum well active region, the electron blocking layer, the p-type conductive layer, the current expanding layer, and the metal reflective layer; a p electrode that is connected to the first electrode groove, and an n electrode that is connected to the second electrode groove; a ring-shaped metal strip structure that is provided on a side of an epitaxial layer structure that faces away from the substrate, the rin |
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