ULTRAVIOLET LED LIGHT SOURCE FLIP CHIP STRUCTURE

Disclosed in the present invention is an ultraviolet light-emitting diode (LED) light source flip chip structure, comprising: a substrate, and a buffer and nucleation layer, a superlattice structure, a n-type conductive layer, a quantum well active region, an electron blocking layer, a p-type conduc...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YANG, Sipan, ZHOU, Hailiang, WANG, Chengmin, HE, Miao
Format: Patent
Sprache:chi ; eng ; fre
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Disclosed in the present invention is an ultraviolet light-emitting diode (LED) light source flip chip structure, comprising: a substrate, and a buffer and nucleation layer, a superlattice structure, a n-type conductive layer, a quantum well active region, an electron blocking layer, a p-type conductive layer, a current expanding layer, and a metal reflective layer, which are sequentially provided in a first direction; a first electrode groove that penetrates the metal reflective layer and part of the current expanding layer; a second electrode groove that penetrates the n-type conductive layer, the quantum well active region, the electron blocking layer, the p-type conductive layer, the current expanding layer, and the metal reflective layer; a p electrode that is connected to the first electrode groove, and an n electrode that is connected to the second electrode groove; a ring-shaped metal strip structure that is provided on a side of an epitaxial layer structure that faces away from the substrate, the rin