SELF-ALIGNED HIGH ASPECT RATIO STRUCTURES AND METHODS OF MAKING

Processing methods to form self-aligned high aspect ratio features are described. The methods comprise depositing a metal film on a structured substrate, volumetrically expanding the metal film, depositing a second film between the expanded pillars and optionally recessing the pillars and repeating...

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Bibliographische Detailangaben
Hauptverfasser:	ROY, Susmit Singha, GOPALRAJA, Praburam, MALLICK, Abhijit Basu, GANDIKOTA, Srinivas
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Processing methods to form self-aligned high aspect ratio features are described. The methods comprise depositing a metal film on a structured substrate, volumetrically expanding the metal film, depositing a second film between the expanded pillars and optionally recessing the pillars and repeating the process to form the high aspect ratio features. L'invention concerne des procédés de traitement pour former des éléments à rapport d'aspect élevé auto-alignés. Les procédés comprennent le dépôt d'un film métallique sur un substrat structuré, l'expansion volumétrique du film métallique, le dépôt d'un second film entre les piliers expansés et facultativement l'évidement des piliers et la répétition du processus pour former les éléments à rapport d'aspect élevé.