ULTRAVIOLET LED CHIP AND FABRICATION METHOD THEREFOR

Disclosed by the present application are an ultraviolet light-emitting diode (LED) chip and a fabrication method therefor; the ultraviolet LED chip, by means of growing an epitaxial structure on a surface of a substrate and providing an insulating layer and a groove contact layer in the middle of the epitaxial structure, isolates the complete epitaxial structure into a first epitaxial structure and a second epitaxial structure that are insulated from each other, extracting an N-type aluminium gallium nitride layer of the first epitaxial structure by means of the groove contact layer; moreover, the ultraviolet LED chip forms a light emitting diode and an electrostatic protection diode respectively by means of an N electrode, a P electrode and an intermediate electrode on the substrate cooperating with the first epitaxial structure and the second epitaxial structure; the electrostatic protection diode is connected in reverse parallel at both ends of the light emitting diode, thus providing an electrostatic disc