SEMICONDUCTOR APPARATUS
A semiconductor apparatus (200, 300) comprising a silicon substrate layer (210) at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer (220) formed above the silicon substrate layer (210), wherein the at least one insulator layer (220) and the dopant...
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| creator | TUOVINEN, Esa RANTAKARI, Pekka VILJANEN, Heikki VÄHÄ-HEIKKILÄ, Tauno |
| description | A semiconductor apparatus (200, 300) comprising a silicon substrate layer (210) at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer (220) formed above the silicon substrate layer (210), wherein the at least one insulator layer (220) and the dopants of the silicon substrate layer (210) have opposite electric charges.
L'invention concerne un appareil à semi-conducteur (200, 300) comprenant une couche de substrat de silicium (210) dont au moins une partie est dopée avec des dopants d'un type de conductivité; et au moins une couche d'isolation (220) formée au-dessus de la couche de substrat de silicium (210), l'au moins une couche d'isolation (220) et les dopants de la couche de substrat de silicium (210) ayant des charges électriques opposées. |
| format | Patent |
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L'invention concerne un appareil à semi-conducteur (200, 300) comprenant une couche de substrat de silicium (210) dont au moins une partie est dopée avec des dopants d'un type de conductivité; et au moins une couche d'isolation (220) formée au-dessus de la couche de substrat de silicium (210), l'au moins une couche d'isolation (220) et les dopants de la couche de substrat de silicium (210) ayant des charges électriques opposées.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181206&DB=EPODOC&CC=WO&NR=2018220275A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181206&DB=EPODOC&CC=WO&NR=2018220275A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TUOVINEN, Esa</creatorcontrib><creatorcontrib>RANTAKARI, Pekka</creatorcontrib><creatorcontrib>VILJANEN, Heikki</creatorcontrib><creatorcontrib>VÄHÄ-HEIKKILÄ, Tauno</creatorcontrib><title>SEMICONDUCTOR APPARATUS</title><description>A semiconductor apparatus (200, 300) comprising a silicon substrate layer (210) at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer (220) formed above the silicon substrate layer (210), wherein the at least one insulator layer (220) and the dopants of the silicon substrate layer (210) have opposite electric charges.
L'invention concerne un appareil à semi-conducteur (200, 300) comprenant une couche de substrat de silicium (210) dont au moins une partie est dopée avec des dopants d'un type de conductivité; et au moins une couche d'isolation (220) formée au-dessus de la couche de substrat de silicium (210), l'au moins une couche d'isolation (220) et les dopants de la couche de substrat de silicium (210) ayant des charges électriques opposées.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAPdvX1dPb3cwl1DvEPUnAMCHAMcgwJDeZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHh_kYGhhZGRgZG5qaOhsbEqQIAbRkgmA</recordid><startdate>20181206</startdate><enddate>20181206</enddate><creator>TUOVINEN, Esa</creator><creator>RANTAKARI, Pekka</creator><creator>VILJANEN, Heikki</creator><creator>VÄHÄ-HEIKKILÄ, Tauno</creator><scope>EVB</scope></search><sort><creationdate>20181206</creationdate><title>SEMICONDUCTOR APPARATUS</title><author>TUOVINEN, Esa ; RANTAKARI, Pekka ; VILJANEN, Heikki ; VÄHÄ-HEIKKILÄ, Tauno</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2018220275A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TUOVINEN, Esa</creatorcontrib><creatorcontrib>RANTAKARI, Pekka</creatorcontrib><creatorcontrib>VILJANEN, Heikki</creatorcontrib><creatorcontrib>VÄHÄ-HEIKKILÄ, Tauno</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TUOVINEN, Esa</au><au>RANTAKARI, Pekka</au><au>VILJANEN, Heikki</au><au>VÄHÄ-HEIKKILÄ, Tauno</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR APPARATUS</title><date>2018-12-06</date><risdate>2018</risdate><abstract>A semiconductor apparatus (200, 300) comprising a silicon substrate layer (210) at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer (220) formed above the silicon substrate layer (210), wherein the at least one insulator layer (220) and the dopants of the silicon substrate layer (210) have opposite electric charges.
L'invention concerne un appareil à semi-conducteur (200, 300) comprenant une couche de substrat de silicium (210) dont au moins une partie est dopée avec des dopants d'un type de conductivité; et au moins une couche d'isolation (220) formée au-dessus de la couche de substrat de silicium (210), l'au moins une couche d'isolation (220) et les dopants de la couche de substrat de silicium (210) ayant des charges électriques opposées.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR APPARATUS |
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