THERMAL CHAMBER WITH IMPROVED THERMAL UNIFORMITY

Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein,...

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Bibliographische Detailangaben
Hauptverfasser:	SPULLER, Matthew, PHAM, Gia, CHAN, Kong Lung Samuel, TAM, Norman L, CHEN, Jau-Jiun, IU, Dongming, RAO, Preetham, NEVILLE, Elizabeth, SHAH, Kartik, MAYUR, Abhilash
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port. Selon certains modes de réalisation, la présente invention concerne généralement une chambre de traitement à semi-conducteur. Dans un mode de réalisation, l'invention concerne une chambre de traitement à semi-conducteur qui comprend un corps de chambre ayant un fond et une paroi latérale délimitant un volume intérieur, la paroi latérale ayant un orifice de transfert de substrat formé en son sein et un ou plusieurs corps absorbants positionnés dans le volume intérieur dans une position opposée à l'orifice de transfert de substrat.