GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR HAVING HIGH BREAKDOWN VOLTAGE AND FORMATION METHOD THEREFOR

A gallium nitride high electron mobility transistor having a high breakdown voltage, and a formation method therefor. The high electron mobility transistor comprises: a substrate (200); a gallium nitride channel layer (303) located on the substrate; a first barrier layer (305) located on the gallium...

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Hauptverfasser:	YAN, Fawang, ZHANG, Feng, ZHAO, Beiji, LI, Chen, LIU, Chunxue
Format:	Patent
Sprache:	chi ; eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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