GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR HAVING HIGH BREAKDOWN VOLTAGE AND FORMATION METHOD THEREFOR

A gallium nitride high electron mobility transistor having a high breakdown voltage, and a formation method therefor. The high electron mobility transistor comprises: a substrate (200); a gallium nitride channel layer (303) located on the substrate; a first barrier layer (305) located on the gallium nitride channel layer; located on the first barrier layer, a gate (603), a source (601) and a drain (602), the source and the drain being respectively located at two sides of the gate; and a second barrier layer (400a) located on the surface of the first barrier layer between the gate and the drain, a side wall of the second barrier layer being connected to a side wall at one side of the gate for generating two-dimensional hole air. The high electron mobility transistor has higher breakdown voltage. L'invention concerne un transistor à haute mobilité d'électrons à base de nitrure de gallium ayant une tension de claquage élevée, et son procédé de formation. Le transistor à haute mobilité d'électrons comprend : un s