THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, AND ELECTRONIC DEVICE

Provided are a thin film transistor and a manufacturing method thereof, an array substrate, and an electronic device. The thin film transistor comprises: a gate (10); a gate insulating layer (20); an active layer (30); and a source/drain electrode (40), wherein a protection structure (50) is provide...

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Bibliographische Detailangaben
Hauptverfasser: MI, Dongcan, LI, Dongsheng, BAN, Shengguang, HE, Xiaolong, HUANG, Rui
Format: Patent
Sprache:chi ; eng ; fre
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Zusammenfassung:Provided are a thin film transistor and a manufacturing method thereof, an array substrate, and an electronic device. The thin film transistor comprises: a gate (10); a gate insulating layer (20); an active layer (30); and a source/drain electrode (40), wherein a protection structure (50) is provided at one surface of the source/drain electrode (40) close to the gate (10). Arrangement of the protection structure (50) at the surface of the source/drain electrode (40) close to the gate (10) prevents the active layer (30) from being damaged in an etching process, such that a trench area of the active layer (30) is not affected by etching, thereby greatly improving electrical performance of the thin film transistor. La présente invention concerne un transistor à couches minces et son procédé de fabrication, un substrat de réseau, et un dispositif électronique. Le transistor à couches minces comprend : une grille (10) ; une couche d'isolation de grille (20) ; une couche active (30) ; et une électrode de source/dra