METHOD FOR SEPARATING EPITAXIAL LAYER BY USING CRACK PATTERN

The present invention relates to a method for separating an epitaxial layer of a heterogeneous material from a semiconductor substrate and the subject matter of the present invention is a method for separating an epitaxial layer by using a crack pattern, the method comprising: a first step for formi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SHIN, Chan Soo, PARK, Won Kyu, LEE, Tae Young, CHOI, Je Hyuk, OH, Sewoung, LEE, Gyu Beom
Format:	Patent
Sprache:	eng ; fre ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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