INSULATED GATE BIPOLAR TRANSISTOR DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING INSULATED GATE BIPOLAR TRANSISTOR DEVICE

The purpose of the present invention is to provide an insulated gate bipolar transistor device which exhibits high performance and high mass productivity, and the like. An insulated gate bipolar transistor device which comprises, as a plurality of trench structures, at least a trench gate, a first d...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MATSUDAI Tomoko, SATOH Katsumi, OMURA Ichiro
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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