A SYSTEM AND A METHOD FOR PRODUCING CONTINUOUS AND MONOLITHIC GRAPHENE

This invention is about a system for chemical vapor deposition (CVD) production comprising a rotating belt system (1200, 2101) where at least one belt (1200) serves as a substrate for film (1300) growth, a CVD reactor (1000, 1101) through which the belt passes and film (1300) growth occurs, and a tr...

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Bibliographische Detailangaben
1. Verfasser:	PYYMAKI PERROS, Alexander Christian
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	This invention is about a system for chemical vapor deposition (CVD) production comprising a rotating belt system (1200, 2101) where at least one belt (1200) serves as a substrate for film (1300) growth, a CVD reactor (1000, 1101) through which the belt passes and film (1300) growth occurs, and a transfer apparatus (1400) which lies on the rotating belt line for transferring at least one film (1300) from the belt (1200), to a target substrate (1403, 9103), and that after the transfer apparatus (1400) is an apparatus for collecting the film (1300) and delivering the film (1300) for further processing as a continuous process. Invention also includes a method for producing continuous and monolithic graphene where a CVD is used to grow graphene on a rotating belt, a transfer apparatus is used to collect at least one film from the belt and from the transfer apparatus the film is fed for further processing, collection etc. Cette invention concerne un système de production par dépôt chimique en phase vapeur (CVD) comprenant un système de courroie rotative (1200, 2101) où au moins une courroie (1200) sert de substrat pour la croissance de film (1300), un réacteur de dépôt chimique en phase vapeur (1000, 1101) à travers lequel se passe la courroie et se produit la croissance du film (1300), et un appareil de transfert (1400) qui repose sur la ligne la de courroie rotative pour transférer au moins un film (1300) de la courroie (1200), vers un substrat cible (1403, 9103). À la suite de l'appareil de transfert (1400), se trouve un appareil de collecte du film (1300) et de distribution du film (1300) en vue d'un traitement ultérieur dans un processus continu. L'invention concerne en outre un procédé de production de graphène continu et monolithique dans lequel un dépôt chimique en phase vapeur est utilisé pour faire croître du graphène sur une courroie rotative, un appareil de transfert est utilisé pour collecter au moins un film à partir de la courroie et, à partir de l'appareil de transfert, le film est acheminé en vue d'un traitement ultérieur, la collecte, etc.