HIGH ASPECT RATIO ETCH

A method for etching a layer in a processing chamber is provided. A plurality of cycles is provided, where each cycle comprises a deposition phase, a clearing phase, and an etching phase. The deposition phase comprises flowing a deposition gas comprising a fluorocarbon or hydrofluorocarbon gas into...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	THIE, William, KIM, Jisoo
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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