RESISTIVITY STANDARD SAMPLE MANUFACTURING METHOD AND EPITAXIAL WAFER RESISTIVITY MEASURING METHOD

The present invention provides a resistivity standard sample manufacturing method comprising: a step of preparing a first conductivity-type silicon single-crystalline substrate; a step of measuring, using a thickness measuring device traceable to a national standard, the thickness of the silicon sin...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KUME Fumitaka
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
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