REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR STRUCTURE AND CORRESPONDING MANUFACTURING METHOD THEREFOR

A reverse conducting insulated gate bipolar transistor structure and a corresponding manufacturing method therefor, and a high-performance RC-IGBT structure capable of being manufactured without a thin-wafer process; provided is an RC-IGBT structure, comprising: an emitter (220/320) located at a front surface; multiple cells under the emitter (220/320); an n-drift region (214/314) located under the cells; a collector (222/322) located at a back surface; a plurality of trenches (240/340) located at the back surface and filled by the collector (222/322); a mechanically supported semiconductor region (241/341) between the trenches (240/340); a p+ collector region (216/316) located at a top portion of each trench (240/340) and connected to the collector (222/322); an n-buffer (215/315) located at a top portion of each p+ collector region (216/316) and below the n-drift region (214/314); an n+ cathode region (217/317), which acts as a part of the mechanically supported semiconductor region (241/341) at a sidewall