LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREFOR

Provided is a light emitting diode (100a), comprising a carrier plate (110a), a chip (130a) and a packaging material (140a). The carrier plate (110a) comprises a conductive region (112a) and an insulating region (114a). The conductive region (112a) is provided with an upper surface (S1) and a lower...

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Bibliographische Detailangaben
Hauptverfasser:	PAN, Ke-Hao, LEE, Shen-Chu, LU, Tsung-Lin, LAI, Jen-Hsiung, LIN, Chih-Min, LEE, Wei-Ting, YU, Pyng, CHEN, Kuo-Yang, YU, Wei-Tyng
Format:	Patent
Sprache:	chi ; eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Provided is a light emitting diode (100a), comprising a carrier plate (110a), a chip (130a) and a packaging material (140a). The carrier plate (110a) comprises a conductive region (112a) and an insulating region (114a). The conductive region (112a) is provided with an upper surface (S1) and a lower surface (S2). The insulating region (114a) covers a portion of the conductive region (112a). The conductive region (112a) comprises at least one first contact region (SP) which is a region located on the lower surface (S2) of the conductive region (112a) and not covered by the insulating region (114a). A first distance (P1) is provided between adjacent first contact regions (CP). The conductive region (112a) also comprises at least one second contact region (SP) which is a region located on the upper surface (S1) of the conductive region (112a) and not covered by the insulating region (114a). A second distance (P2) is provided between adjacent second contact regions (CP), wherein the first distance (P1) is greater