SEMICONDUCTOR PACKAGE AND RELATED METHODS
Implementations of semiconductor packages, such as power modules used in automobiles, may include: a first substrate (16, 50) having a first dielectric layer (20, 54) coupled between a first metal layer (22, 56) and a second metal layer (24, 58); a second substrate (18, 60) having a second dielectri...
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Zusammenfassung: | Implementations of semiconductor packages, such as power modules used in automobiles, may include: a first substrate (16, 50) having a first dielectric layer (20, 54) coupled between a first metal layer (22, 56) and a second metal layer (24, 58); a second substrate (18, 60) having a second dielectric layer (30, 60) coupled between a third metal layer (32, 62) and a fourth metal layer (34, 64). A first die (40, 74) may be coupled with a first electrical spacer (42, 78) coupled in a space between and coupled with the first substrate (16, 50) and the second substrate (18, 60) and a second die (44, 76) may be coupled with a second electrical spacer (46, 80) coupled in a space between and coupled with the first substrate (16, 50) and the second substrate (18, 60). The first die (40) and the second die (44) may be positioned in opposite orientations, with the first electrical spacer (42) coupled with the third metal layer (32), the first die (40) coupled with the second metal layer (24), the second electrical spacer (46) coupled with the second metal layer (24) and the second die (44) coupled with the third metal layer (32). Alternatively, the first die (74) and the second die (76) may be in a similar orientation both coupled to the third metal layer (62), both the first electrical spacer (78) and the second electrical spacer (80) being coupled with the second metal layer (58). The extension portion of the second dielectric layer (30, 60) and the extension portion of the first dielectric layer (20, 54) may include substantially similar lengths or the extension portion of the second dielectric layer (30, 60) may extend beyond the extension portion of the first dielectric layer (20, 54) and the lengths of the third and the fourth metal layers (32, 34, 62, 64) may be longer than the lengths of the first and the second metal layers (22, 24, 56, 58). The substrates may be biased relative to a molding apparatus by one or more springs. Flexible interconnection supports/members may be used to provide an interconnect between a first substrate and a second substrate, flexible members may also be used between a die and a substrate. The flexible members may be spacers for the electrical interconnects. They may also integrate a spring biasing function which can be a spiral spring, a sponge-like structure or a clip of various shapes.
Des modes de réalisation de boîtiers de semi-conducteur peuvent comprendre : un premier substrat ayant une première couche diélectrique couplée |
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