SEMICONDUCTOR SWITCHING ELEMENT

A switching element including: a bottom insulating layer disposed at a bottom of a trench; a side surface insulating film covering a side surface of the trench; and a gate electrode disposed inside the trench and insulated from a semiconductor substrate. The semiconductor substrate has a bottom regi...

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Bibliographische Detailangaben
Hauptverfasser: EGUCHI, Hiroomi, YAMASHITA, Yusuke, MISUMI, Tadashi, URAKAMI, Yasushi
Format: Patent
Sprache:eng ; fre
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