USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT AND / OR COBALT ALLOY COMPRISING SUBSTRATES

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a poly(amino acid) and or a salt thereof (C) at least one amino ac...

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Bibliographische Detailangaben
Hauptverfasser:	LAUTER, Michael, GOLZARIAN, Reza M, GUEVENC, Haci Osman, WEI, Te Yu, LAN, Yongqing, SIEBERT, Max, USMAN IBRAHIM, Sheik Ansar
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	ADHESIVES CHEMISTRY DYES METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SKI WAXES
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Beschreibung
Zusammenfassung:	Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a poly(amino acid) and or a salt thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10. L'invention concerne l'utilisation d'une composition (Q) de polissage chimio-mécanique (CMP) pour le polissage chimio-mécanique d'un substrat (S) comprenant (i) du cobalt et/ou (ii) un alliage de cobalt, la composition (Q) de CMP comprenant (A) des particules inorganiques, (B) un poly(acide aminé) et ou un sel correspondant (C), au moins un acide aminé, (D) au moins un oxydant (E), un milieu aqueux, la composition (Q) de CMP ayant un pH de 7 à 10.