TUNGSTEN POST-CMP CLEANING COMPOSITIONS

A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating a...

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Bibliographische Detailangaben
Hauptverfasser:	WHITE, Daniela, MEDD, Steve, WHITE, Michael, JENG, Shrane-Ning (Shining), FRYE, Don, PARSON, Thomas
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES BASIC ELECTRIC ELEMENTS CANDLES CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING OR DEGREASING OF METALLIC MATERIAL BY CHEMICALMETHODS OTHER THAN ELECTROLYSIS COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DETERGENT COMPOSITIONS DETERGENTS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FATTY ACIDS THEREFROM INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY RECOVERY OF GLYCEROL RESIN SOAPS SEMICONDUCTOR DEVICES SOAP OR SOAP-MAKING USE OF SINGLE SUBSTANCES AS DETERGENTS
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Beschreibung
Zusammenfassung:	A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers. L'invention porte sur une composition d'élimination et sur un procédé de nettoyage de particules et d'agents contaminants post-polissage mécano-chimique (CMP) d'un dispositif micro-électronique sur lequel se trouvent lesdites particules et lesdits contaminants. Les compositions d'élimination comprennent au moins un additif organique ; au moins un agent de chélation métallique ; et au moins un polyélectrolyte. La composition permet l'élimination très efficace des particules et de la matière contaminante post-CMP de la surface du dispositif micro-électronique sans altérer les matériaux à faible constante diélectrique k, le nitrure de silicium, les matériaux à faible constante diélectrique k, et les matériaux contenant du métal tels que des couches contenant du tungstène.