POLYMER, ORGANIC LAYER COMPOSITION, AND METHOD FOR FORMING PATTERNS

The present invention provides a polymer comprising a structure unit represented by chemical formula 1 below and a structure unit represented by chemical formula 2 below, an organic layer composition comprising the polymer, and a method for forming patterns using the organic layer composition. In th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MUN, Soohyoun, HEO, Yumi, NAMGUNG, Ran, NAM, Younhee, RATHWELL, Dominea, KWON, Hyo Young, JUNG, Hyeonil, SONG, Hyunji
Format: Patent
Sprache:eng ; fre ; kor
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present invention provides a polymer comprising a structure unit represented by chemical formula 1 below and a structure unit represented by chemical formula 2 below, an organic layer composition comprising the polymer, and a method for forming patterns using the organic layer composition. In the chemical formula 1 and 2, A1 and A2 are each independently a divalent group comprising at least one substituted or unsubstituted benzene ring, A3 is a divalent group each containing a quaternary carbon and a ring, symbol * is a point of connection. La présente invention concerne un polymère comprenant un motif structural représenté par la formule chimique 1 ci-dessous et un motif structural représenté par la formule chimique 2 ci-dessous, une composition de couche organique comprenant le polymère, et un procédé de formation de motifs mettant en œuvre la composition de couche organique. Dans les formules chimiques 1 et 2, A1 et A2 représentent chacun indépendamment un groupe divalent comprenant au moins un noyau benzénique substitué ou non substitué, A3 est un groupe divalent, chacun comportant un carbone quaternaire et un cycle, le symbole * est un point de connexion. 본 발명은 화학식 1로 표현되는 구조단위 및 화학식 2로 표현되는 구조단위를 포함하는 중합체, 상기 중합체를 포함하는 유기막 조성물, 그리고 상기 유기막 조성물을 사용하는 패턴형성방법을 제공한다. 상기 화학식 1 및 2에서, A1 및 A2는 각각 독립적으로 치환 또는 비치환된 벤젠 고리를 적어도 하나 포함하는 2가의 기이고, A3은 4차 탄소와 고리를 각각 함유하는 2가의 기이고, *는 연결지점이다.