VAPOR DISPOSITION OF SILICON-CONTAINING FILMS USING PENTA-SUBSTITUTED DISILANES

Disclosed are methods of depositing silicon-containing films on substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane. L'invention concerne des procédés de dépôt de films contenant du silicium sur des substrats...

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Bibliographische Detailangaben
Hauptverfasser:	KO, Changhee, YANAGITA, Kazutaka, GIRARD, Jean-Marc, OSHCHEPKOV, Ivan, OKUBO, Shingo, NODA, Naoto, GATINEAU, Julien
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Disclosed are methods of depositing silicon-containing films on substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane. L'invention concerne des procédés de dépôt de films contenant du silicium sur des substrats par des procédés de dépôt en phase vapeur à l'aide de disilanes penta-substitués, tels qu'un pentahalodisilane ou un pentakis(diméthylamino)disilane.