DAMAGE FREE ENHANCEMENT OF DOPANT DIFFUSION INTO A SUBSTRATE

A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300°C or greater. The method may further include depositing a doping layer containing a dopant on the surface of the substra...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ROWLAND, Christopher A, HATEM, Christopher R
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!