SAPPHIRE SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

[Problem] The present invention addresses the problem of providing a sapphire single crystal with which it is possible to reliably reduce ΔT as well as to realize a reduction in ΔT without increasing the complexity of the production equipment or raising the cost, and a method for producing the sapph...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SAITO Hironori, KAMATA Kazuhiko, SATO Tsugio, KOTAKI Toshiro, HIGUCHI Kazuto
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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