METHOD FOR DEPOSITING SILICON NITRIDE THIN FILM AT LOW TEMPERATURE

Provided is a method for depositing a silicon nitride thin film at a low temperature, comprising: controlling the temperature of an object stage; mounting a substrate; aerating SiH4, NH3, and N2; providing a radio frequency by a radio frequency system, and depositing a thin film by means of a plasma...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YU, Peng, DU, Yuanting, LIU, Yijun, LIU, Jingjing, CHANG, Xiaona, SHANG, Qingyan
Format:	Patent
Sprache:	chi ; eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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