CONTINUOUS SPATIAL ATOMIC LAYER DEPOSITION PROCESS AND APPARATUS FOR APPLYING FILMS ON PARTICLES

Continuous spatial atomic layer deposition is performed on a particulate substrate in a continuous reactor comprising a plurality of spatially separated, precursor dosing zones and a means for moving the particulate substrate spatially through the precursor dosing zones to apply an atomic layer depo...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SPENCER II, Joseph, Allen, HALL, Robert, A
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Continuous spatial atomic layer deposition is performed on a particulate substrate in a continuous reactor comprising a plurality of spatially separated, precursor dosing zones and a means for moving the particulate substrate spatially through the precursor dosing zones to apply an atomic layer deposition coating thereon. The precursor dosing zones may be used simultaneously. L'invention concerne le dépôt de couche atomique spatial continu, qui est réalisé sur un substrat particulaire dans un réacteur continu comprenant une pluralité de zones de dosage de précurseur séparées spatialement, et un moyen pour déplacer le substrat particulaire spatialement à travers les zones de dosage de précurseur pour appliquer un revêtement de dépôt de couche atomique sur ce dernier. Les zones de dosage de précurseur peuvent être utilisées simultanément.