PREPARATION METHOD FOR GAAS-BASED SEMICONDUCTOR DEVICE

A preparation method for a GaAs-based semiconductor device, comprises the following steps: providing a base material including a GaAs-based semiconductor wafer (1) formed with at least a base region (112), an emitter region (111) and a collector region (113), there being a height difference between adjacent electrode regions and a convex taper angle being formed at the height drop; forming an insulating layer (3) on the base material, the shape of the insulating layer being matched or basically matched with that of the base material; etching the insulating layer by photolithography process to expose the electrode regions; etching remaining insulating layer by photolithography process to make the insulating layer region corresponding to the height drop of the base material surface have a smooth transition; forming a metal layer (4). The problem that cracks are generated on the metal layer can be avoided by smoothing treatment of the insulating layer surface. L'invention concerne un procédé de préparation d'un