ATOMIC LAYER DEPOSITION CHAMBER WITH FUNNEL-SHAPED GAS DISPERSION CHANNEL AND GAS DISTRIBUTION PLATE
Methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body; a chamber lid assembly having a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a li...
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| creator | JIAN, Guoqiang SANCHEZ, Mario Dan YANG, Yixiong RASHEED, Muhammad, M AGARWAL, Ashutosh JADHAV, Deepak GANDIKOTA, Srinivas |
| description | Methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body; a chamber lid assembly having a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; and a gas distribution plate disposed below the lid plate and having a plurality of apertures disposed through the gas distribution plate.
L'invention porte sur des procédés et sur un appareil pour traiter un substrat. Dans certains modes de réalisation, une chambre de traitement de substrat comprend : un corps de chambre; un ensemble de couvercle de chambre ayant un boîtier entourant un canal central qui s'étend le long d'un axe central et possède une partie supérieure et une partie inférieure; une plaque de couvercle accouplée au boîtier et ayant une surface inférieure profilée qui s'étend vers le bas et vers l'extérieur à partir d'une ouverture centrale accouplée à la partie inférieure du canal central en direction d'une partie périphérique de la plaque de couvercle; et une plaque de distribution de gaz disposée sous la plaque de couvercle, une pluralité d'ouvertures étant ménagée à travers la plaque de distribution de gaz. |
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L'invention porte sur des procédés et sur un appareil pour traiter un substrat. Dans certains modes de réalisation, une chambre de traitement de substrat comprend : un corps de chambre; un ensemble de couvercle de chambre ayant un boîtier entourant un canal central qui s'étend le long d'un axe central et possède une partie supérieure et une partie inférieure; une plaque de couvercle accouplée au boîtier et ayant une surface inférieure profilée qui s'étend vers le bas et vers l'extérieur à partir d'une ouverture centrale accouplée à la partie inférieure du canal central en direction d'une partie périphérique de la plaque de couvercle; et une plaque de distribution de gaz disposée sous la plaque de couvercle, une pluralité d'ouvertures étant ménagée à travers la plaque de distribution de gaz.</description><language>eng ; fre</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161027&DB=EPODOC&CC=WO&NR=2016172085A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161027&DB=EPODOC&CC=WO&NR=2016172085A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JIAN, Guoqiang</creatorcontrib><creatorcontrib>SANCHEZ, Mario Dan</creatorcontrib><creatorcontrib>YANG, Yixiong</creatorcontrib><creatorcontrib>RASHEED, Muhammad, M</creatorcontrib><creatorcontrib>AGARWAL, Ashutosh</creatorcontrib><creatorcontrib>JADHAV, Deepak</creatorcontrib><creatorcontrib>GANDIKOTA, Srinivas</creatorcontrib><title>ATOMIC LAYER DEPOSITION CHAMBER WITH FUNNEL-SHAPED GAS DISPERSION CHANNEL AND GAS DISTRIBUTION PLATE</title><description>Methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body; a chamber lid assembly having a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; and a gas distribution plate disposed below the lid plate and having a plurality of apertures disposed through the gas distribution plate.
L'invention porte sur des procédés et sur un appareil pour traiter un substrat. Dans certains modes de réalisation, une chambre de traitement de substrat comprend : un corps de chambre; un ensemble de couvercle de chambre ayant un boîtier entourant un canal central qui s'étend le long d'un axe central et possède une partie supérieure et une partie inférieure; une plaque de couvercle accouplée au boîtier et ayant une surface inférieure profilée qui s'étend vers le bas et vers l'extérieur à partir d'une ouverture centrale accouplée à la partie inférieure du canal central en direction d'une partie périphérique de la plaque de couvercle; et une plaque de distribution de gaz disposée sous la plaque de couvercle, une pluralité d'ouvertures étant ménagée à travers la plaque de distribution de gaz.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEhxDPH39XRW8HGMdA1ScHEN8A_2DPH091Nw9nD0dQIKhXuGeCi4hfr5ufroBns4Bri6KLg7Biu4eAYHuAYFQ1WCZBUc_eBSIUGeTqFgYwJ8HENceRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfLi_kYGhmaG5kYGFqaOhMXGqABioNWM</recordid><startdate>20161027</startdate><enddate>20161027</enddate><creator>JIAN, Guoqiang</creator><creator>SANCHEZ, Mario Dan</creator><creator>YANG, Yixiong</creator><creator>RASHEED, Muhammad, M</creator><creator>AGARWAL, Ashutosh</creator><creator>JADHAV, Deepak</creator><creator>GANDIKOTA, Srinivas</creator><scope>EVB</scope></search><sort><creationdate>20161027</creationdate><title>ATOMIC LAYER DEPOSITION CHAMBER WITH FUNNEL-SHAPED GAS DISPERSION CHANNEL AND GAS DISTRIBUTION PLATE</title><author>JIAN, Guoqiang ; SANCHEZ, Mario Dan ; YANG, Yixiong ; RASHEED, Muhammad, M ; AGARWAL, Ashutosh ; JADHAV, Deepak ; GANDIKOTA, Srinivas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2016172085A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2016</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>JIAN, Guoqiang</creatorcontrib><creatorcontrib>SANCHEZ, Mario Dan</creatorcontrib><creatorcontrib>YANG, Yixiong</creatorcontrib><creatorcontrib>RASHEED, Muhammad, M</creatorcontrib><creatorcontrib>AGARWAL, Ashutosh</creatorcontrib><creatorcontrib>JADHAV, Deepak</creatorcontrib><creatorcontrib>GANDIKOTA, Srinivas</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JIAN, Guoqiang</au><au>SANCHEZ, Mario Dan</au><au>YANG, Yixiong</au><au>RASHEED, Muhammad, M</au><au>AGARWAL, Ashutosh</au><au>JADHAV, Deepak</au><au>GANDIKOTA, Srinivas</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ATOMIC LAYER DEPOSITION CHAMBER WITH FUNNEL-SHAPED GAS DISPERSION CHANNEL AND GAS DISTRIBUTION PLATE</title><date>2016-10-27</date><risdate>2016</risdate><abstract>Methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body; a chamber lid assembly having a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; and a gas distribution plate disposed below the lid plate and having a plurality of apertures disposed through the gas distribution plate.
L'invention porte sur des procédés et sur un appareil pour traiter un substrat. Dans certains modes de réalisation, une chambre de traitement de substrat comprend : un corps de chambre; un ensemble de couvercle de chambre ayant un boîtier entourant un canal central qui s'étend le long d'un axe central et possède une partie supérieure et une partie inférieure; une plaque de couvercle accouplée au boîtier et ayant une surface inférieure profilée qui s'étend vers le bas et vers l'extérieur à partir d'une ouverture centrale accouplée à la partie inférieure du canal central en direction d'une partie périphérique de la plaque de couvercle; et une plaque de distribution de gaz disposée sous la plaque de couvercle, une pluralité d'ouvertures étant ménagée à travers la plaque de distribution de gaz.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | ATOMIC LAYER DEPOSITION CHAMBER WITH FUNNEL-SHAPED GAS DISPERSION CHANNEL AND GAS DISTRIBUTION PLATE |
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