SEMICONDUCTOR DEVICE

A semiconductor device (1) is provided with: a first trench (611) that is formed in a surface of a semiconductor substrate (10); and a second trench (612), which is formed in the surface of the semiconductor substrate (10), and in a planar view of the surface of the semiconductor substrate (10), sai...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: NISHIWAKI KATSUHIKO
Format: Patent
Sprache:eng ; fre ; jpn
Schlagworte:
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