SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate, a ground electrode being disposed on the rear side of the substrate; and a semiconductor layer located on the front side of the substrate; the semiconductor layer comprises a active region (5) and a passive region, the active region (5) being closed, and an area outside the active region (5) being the passive region, and a source (11) located in the active region (5) and a source pad (13) located in the passive region, the source pad (13) being electrically connected to the source (11) directly, and each source (11) in the active region is grounded separately through the source pad (13) that is directly connected thereto and a via hole(4). The problem caused by the arrangement of via hole positions in the existing semiconductor device is solved, and in addition, by using the advantage of via holes, the grounding inductance of the source of a device is reduced as much as possible, and performance such as