THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE
Provided are a thin film transistor and manufacturing method thereof, array substrate and display device, capable of solving the problem of degraded performance of a thin film transistor due to the fact that when a semiconductor active area of an existing thin film transistor is converted into a dop...
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Format: | Patent |
Sprache: | chi ; eng ; fre |
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Zusammenfassung: | Provided are a thin film transistor and manufacturing method thereof, array substrate and display device, capable of solving the problem of degraded performance of a thin film transistor due to the fact that when a semiconductor active area of an existing thin film transistor is converted into a doped semiconductor active area, doping ionic impurities damage the crystal lattice of the semiconductor active area. The thin film transistor comprises a gate electrode (102), a gate electrode insulating layer (103), a semiconductor active area (105), a source electrode and drain electrode (107) connected to the semiconductor active area (105), and a surface charge transfer layer (104) contacting the semiconductor active area (105). The surface charge transfer layer (104) is located above or below the semiconductor active area (105), and is used to enable the semiconductor active area (105) to generate a large number of holes or electrons without changing the crystal lattice structure thereof. In the thin film transi |
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