SEMICONDUCTOR DEVICE AND DIELECTRIC FILM

The semiconductor device of the embodiment is provided with a first conducting layer, a second conducting layer, and, between the first conducting layer and the second conducting layer, a dielectric film containing a fluorite crystal, wherein positive ion sites contain at least any one of Hf (hafniu...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ISHIHARA, TAKAMITSU, KATO, KOICHI, MATSUSHITA, DAISUKE, INO, TSUNEHIRO, NAKASAKI, YASUSHI, TAKAISHI, RIICHIRO
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!