FIN FORMATION BY EPITAXIAL DEPOSITION

Methods of forming a fin structure for a field effect transistor are described. The methods may include the operations of patterning a mandrel on a surface of a substrate, and depositing an epitaxial layer of high-mobility channel material over exposed surfaces of the patterned mandrel. The epitaxia...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WOOD, BINGXI, SANCHEZ, ERROL, BOLAND, JOHN, HUANG, YIIAU, KIM, YIHWAN, BRAND, ADAM
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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