COMPOSITIONS AND METHODS FOR CMP OF SILICON OXIDE, SILICON NITRIDE, AND POLYSILICON MATERIALS

The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and p...

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Bibliographische Detailangaben
Hauptverfasser:	WARD, WILLIAM, DINEGA, DMITRY, MOEGGENBORG, KEVIN, MATEJA, DANIEL
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer. La présente invention concerne un procédé de polissage chimico-mécanique pour polir un substrat comprenant du dioxyde de silicium, du nitrure du silicium et du polysilicium. Le procédé consiste à abraser une surface du substrat avec une composition de CMP pour en retirer au moins une certaine quantité de dioxyde de silicium, de nitrure de silicium et de polysilicium. La composition de CMP comprend un abrasif particulaire d'oxyde de cérium en suspension dans un excipient aqueux ayant un pH d'environ 3 à 9,5 et contenant un polymère cationique, le polymère cationique étant constitué d'un polymère quaternaire à base de méthacryloyloxyalkyl ammonium.