PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
In a plasma film-forming apparatus (100), a supplementary plate (9) as a protruding section is mounted on substantially the whole non-placing region (R2) of a lower electrode (5). The supplementary plate (9) has a frame shape, and is disposed to surround the whole rectangular placing region (R1). Th...
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| creator | HUKUDA TOMOHIRO DEMICHI KIMIHIKO KOHAMA NORIYOSHI |
| description | In a plasma film-forming apparatus (100), a supplementary plate (9) as a protruding section is mounted on substantially the whole non-placing region (R2) of a lower electrode (5). The supplementary plate (9) has a frame shape, and is disposed to surround the whole rectangular placing region (R1). The supplementary plate (9) is a board-like member that can be attached to and detached from the lower electrode (5), and is configured from a dielectric material, such as quartz, ceramic, and heat-resistant synthetic resin, or a conductive material, such as aluminum, aluminum alloy, and stainless steel. A step (80) between a substrate (S) and the lower electrode (5) is reduced or eliminated by means of the supplementary plate (9), and a gas (G) is made to easily flow to a corner section of the substrate (S).
La présente invention concerne un appareil de formation de film de plasma (100), dans lequel une plaque supplémentaire (9) en tant que section saillante est montée sur sensiblement la totalité de la région de non positionnement (R2) d'une électrode inférieure (5). La plaque supplémentaire (9) présente une forme de cadre, et est disposée pour entourer la totalité de la région de positionnement rectangulaire (R1). La plaque supplémentaire (9) est un élément en forme de panneau qui peut être fixé à et séparé de l'électrode inférieure (5), et est conçue à partir d'un matériau diélectrique, tel que du quartz, de la céramique, et une résine synthétique thermorésistante, ou un matériau conducteur, tel que de l'alumine, un alliage d'alumine, et de l'acier inoxydable. Un échelon (80) entre un substrat (S) et l'électrode inférieure (5) est réduit ou éliminé au moyen de la plaque supplémentaire (9), et un gaz (G) peut facilement s'écouler vers une section d'angle du substrat (S). |
| format | Patent |
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La présente invention concerne un appareil de formation de film de plasma (100), dans lequel une plaque supplémentaire (9) en tant que section saillante est montée sur sensiblement la totalité de la région de non positionnement (R2) d'une électrode inférieure (5). La plaque supplémentaire (9) présente une forme de cadre, et est disposée pour entourer la totalité de la région de positionnement rectangulaire (R1). La plaque supplémentaire (9) est un élément en forme de panneau qui peut être fixé à et séparé de l'électrode inférieure (5), et est conçue à partir d'un matériau diélectrique, tel que du quartz, de la céramique, et une résine synthétique thermorésistante, ou un matériau conducteur, tel que de l'alumine, un alliage d'alumine, et de l'acier inoxydable. Un échelon (80) entre un substrat (S) et l'électrode inférieure (5) est réduit ou éliminé au moyen de la plaque supplémentaire (9), et un gaz (G) peut facilement s'écouler vers une section d'angle du substrat (S).</description><language>eng ; fre ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20141224&DB=EPODOC&CC=WO&NR=2014203719A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20141224&DB=EPODOC&CC=WO&NR=2014203719A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HUKUDA TOMOHIRO</creatorcontrib><creatorcontrib>DEMICHI KIMIHIKO</creatorcontrib><creatorcontrib>KOHAMA NORIYOSHI</creatorcontrib><title>PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD</title><description>In a plasma film-forming apparatus (100), a supplementary plate (9) as a protruding section is mounted on substantially the whole non-placing region (R2) of a lower electrode (5). The supplementary plate (9) has a frame shape, and is disposed to surround the whole rectangular placing region (R1). The supplementary plate (9) is a board-like member that can be attached to and detached from the lower electrode (5), and is configured from a dielectric material, such as quartz, ceramic, and heat-resistant synthetic resin, or a conductive material, such as aluminum, aluminum alloy, and stainless steel. A step (80) between a substrate (S) and the lower electrode (5) is reduced or eliminated by means of the supplementary plate (9), and a gas (G) is made to easily flow to a corner section of the substrate (S).
La présente invention concerne un appareil de formation de film de plasma (100), dans lequel une plaque supplémentaire (9) en tant que section saillante est montée sur sensiblement la totalité de la région de non positionnement (R2) d'une électrode inférieure (5). La plaque supplémentaire (9) présente une forme de cadre, et est disposée pour entourer la totalité de la région de positionnement rectangulaire (R1). La plaque supplémentaire (9) est un élément en forme de panneau qui peut être fixé à et séparé de l'électrode inférieure (5), et est conçue à partir d'un matériau diélectrique, tel que du quartz, de la céramique, et une résine synthétique thermorésistante, ou un matériau conducteur, tel que de l'alumine, un alliage d'alumine, et de l'acier inoxydable. Un échelon (80) entre un substrat (S) et l'électrode inférieure (5) est réduit ou éliminé au moyen de la plaque supplémentaire (9), et un gaz (G) peut facilement s'écouler vers une section d'angle du substrat (S).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAI8HEM9nVUCAjyd3YNDvb0c1dwDAhwDHIMCQ1WcPRzUcCU93UN8fB34WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8eH-RgaGJkYGxuaGlo6GxsSpAgAX5imE</recordid><startdate>20141224</startdate><enddate>20141224</enddate><creator>HUKUDA TOMOHIRO</creator><creator>DEMICHI KIMIHIKO</creator><creator>KOHAMA NORIYOSHI</creator><scope>EVB</scope></search><sort><creationdate>20141224</creationdate><title>PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD</title><author>HUKUDA TOMOHIRO ; DEMICHI KIMIHIKO ; KOHAMA NORIYOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2014203719A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; jpn</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HUKUDA TOMOHIRO</creatorcontrib><creatorcontrib>DEMICHI KIMIHIKO</creatorcontrib><creatorcontrib>KOHAMA NORIYOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HUKUDA TOMOHIRO</au><au>DEMICHI KIMIHIKO</au><au>KOHAMA NORIYOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD</title><date>2014-12-24</date><risdate>2014</risdate><abstract>In a plasma film-forming apparatus (100), a supplementary plate (9) as a protruding section is mounted on substantially the whole non-placing region (R2) of a lower electrode (5). The supplementary plate (9) has a frame shape, and is disposed to surround the whole rectangular placing region (R1). The supplementary plate (9) is a board-like member that can be attached to and detached from the lower electrode (5), and is configured from a dielectric material, such as quartz, ceramic, and heat-resistant synthetic resin, or a conductive material, such as aluminum, aluminum alloy, and stainless steel. A step (80) between a substrate (S) and the lower electrode (5) is reduced or eliminated by means of the supplementary plate (9), and a gas (G) is made to easily flow to a corner section of the substrate (S).
La présente invention concerne un appareil de formation de film de plasma (100), dans lequel une plaque supplémentaire (9) en tant que section saillante est montée sur sensiblement la totalité de la région de non positionnement (R2) d'une électrode inférieure (5). La plaque supplémentaire (9) présente une forme de cadre, et est disposée pour entourer la totalité de la région de positionnement rectangulaire (R1). La plaque supplémentaire (9) est un élément en forme de panneau qui peut être fixé à et séparé de l'électrode inférieure (5), et est conçue à partir d'un matériau diélectrique, tel que du quartz, de la céramique, et une résine synthétique thermorésistante, ou un matériau conducteur, tel que de l'alumine, un alliage d'alumine, et de l'acier inoxydable. Un échelon (80) entre un substrat (S) et l'électrode inférieure (5) est réduit ou éliminé au moyen de la plaque supplémentaire (9), et un gaz (G) peut facilement s'écouler vers une section d'angle du substrat (S).</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
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