A METHOD FOR FORMING SILICON GRASS

The present invention relates to a method for forming Si grass structure comprising: forming a silicon well (100); and etching the silicon well to form silicon grass structure (200); characterized in that the step of forming silicon well (100) is conducted using a standard deep reactive ion etching...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	AZLINA, MOHD ZAIN, FADZILAH, ARIFIN, MUHAMAD RAMDZAN, BUYONG
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TRANSPORTING
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