A METHOD OF FORMING SUBSTRATES WITH HIGH SURFACE AREA NANOCOATINGS AND NANOSTRUCTURE

The present invention relates to a method for forming substrates with high surface area nanocoatings of semiconductor and/or dielectric materials, wherein it comprises the following steps: a) on a substrate, preferably a silicon, quartz, or gallium nitride substrate, a textured layer is formed, pref...

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Bibliographische Detailangaben
Hauptverfasser:	WACHNICKI, UKASZ, GIERA TOWSKA, SYLWIA, GODLEWSKI, MAREK, KOPALKO, KRZYSZTOF, WITKOWSKI, BART OMIEJ
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The present invention relates to a method for forming substrates with high surface area nanocoatings of semiconductor and/or dielectric materials, wherein it comprises the following steps: a) on a substrate, preferably a silicon, quartz, or gallium nitride substrate, a textured layer is formed, preferably comprising nanorods, nanodots or nanowires, fixed to the substrate; b) on the textured layer in step a) a semiconductor and/or dielectric nanocoating is deposited; c) after deposition of nanocoating in step b) the textured layer are removed and the nanostructure. La présente invention concerne un procédé de formation de substrats à nanorevêtements de grande surface constitués de matériaux diélectriques et/ou semi-conducteurs, comprenant les étapes suivantes qui consistent : a) sur un substrat, de préférence un substrat de silicium, de quartz ou de nitrure de gallium, à former une couche texturée comprenant de préférence des nanotiges, des nanofils ou des nanopoints, fixée au substrat ; b) sur la couche texturée issue de l'étape a) à déposer un nanorevêtement semi-conducteur et/ou diélectrique ; c) après le dépôt du nanorevêtement dans l'étape b), à enlever la couche texturée et la nanostructure.