In-Ga-Zn COMPOSITE OXIDE SINTERED COMPACT AND METHOD FOR MANUFACTURING SAME

This In-Ga-Zn composite oxide sintered compact is represented by the formula InxGayZnzOa (wherein, x/(x + y) = 0.2 to 0.8, z/(x + y +z) = 0.1 to 0.5, and a = (3/2)x + (3/2)y + z), the In-Ga-Zn composite oxide sintered compact having a bulk resistance value of less than 1.0 × 10-3 ⋅cm. La présente in...

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Bibliographische Detailangaben
Hauptverfasser:	NAKATA, KUNIHIKO, FUJIYOSHI, KUNITAKA
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Zusammenfassung:	This In-Ga-Zn composite oxide sintered compact is represented by the formula InxGayZnzOa (wherein, x/(x + y) = 0.2 to 0.8, z/(x + y +z) = 0.1 to 0.5, and a = (3/2)x + (3/2)y + z), the In-Ga-Zn composite oxide sintered compact having a bulk resistance value of less than 1.0 × 10-3 ⋅cm. La présente invention concerne une pastille frittée d'oxyde composite d'In-Ga-Zn qui est représentée par la formule InxGayZnzOa (dans laquelle, x/(x + y) = 0,2 à 0,8, z/(x + y +z) = 0,1 à 0,5, et a = (3/2)x + (3/2)y + z), la pastille frittée d'oxyde composite d'In-Ga-Zn ayant une valeur de résistance volumique inférieure à 1,0 × 10-3 ⋅cm.