METHOD OF FABRICATING A BOND PAD IN A SEMICONDUCTOR DEVICE

In fabricating a bond pad in a semiconductor device, the silicon nitride and silicon dioxide layers are separately etched using fluorine-based plasma in a reactive ion etching process chamber. Each layer's recipe is customized, instead of using the same recipe or parameters for both layers as c...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	AMIR, MOHAMMAD FAIRUZ, MAN, MAZLIN, WAN SABLI, SHARAIFAH KAMARIAH, MOHD ZAIN, AZLINA, BUYONG, MUHAMMAD RAMDZAM
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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