APPARATUS AND METHODS FOR HIGH PRESSURE LEACHING OF POLYCRYSTALLINE DIAMOND CUTTER ELEMENTS

A method for leaching a PCD table for a cutter element includes (a) positioning a PCD table within a leaching chamber. The method also includes (b) submerging the PCD table in an acid within the leaching chamber. In addition, the method includes (c) sealing the leaching chamber. Further, the method...

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Bibliographische Detailangaben
Hauptverfasser:	STREATER, JAMES R, GILLEYLEN, RUSS, ZHAN, GUODONG, GHANSYAM, HARESH, PARKER, ANONDRIA M, DONALD, SEAN
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
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Beschreibung
Zusammenfassung:	A method for leaching a PCD table for a cutter element includes (a) positioning a PCD table within a leaching chamber. The method also includes (b) submerging the PCD table in an acid within the leaching chamber. In addition, the method includes (c) sealing the leaching chamber. Further, the method includes (d) increasing the pressure within the leaching chamber to a pressure greater than or equal to 20,000 psi after (c). L'invention concerne un procédé pour lixivier une table en PCD pour un élément de découpe qui comprend (a) le positionnement d'une table en PCD dans une chambre de lixiviation. Le procédé comprend également (b) l'immersion de la table en PCD dans un acide dans la chambre de lixiviation. De plus, le procédé comprend (c) le scellage de la chambre de lixiviation. De plus, le procédé comprend (d) l'augmentation de la pression dans la chambre de lixiviation à une pression supérieure ou égale à 20 000 livres par pouce carré (psi) après (c).