METAL MATERIAL FOR USE IN ELECTRONIC COMPONENT, AND METHOD FOR PRODUCING SAME

Provided are: a metal material for use in an electronic component and having low insertion/removal resistance, low whisker occurrence, and high durability; and a method for producing the same. A metal material (10) for use in an electronic component and equipped with a substrate (11), an A-layer (14...

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Bibliographische Detailangaben
Hauptverfasser:	KODAMA,ATSUSHI, SHIBUYA,YOSHITAKA, FUKAMACHI,KAZUHIKO
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	ALLOYS APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONDUCTORS CURRENT COLLECTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS LINE CONNECTORS METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	Provided are: a metal material for use in an electronic component and having low insertion/removal resistance, low whisker occurrence, and high durability; and a method for producing the same. A metal material (10) for use in an electronic component and equipped with a substrate (11), an A-layer (14) for configuring the outermost layer of the substrate (11), and formed from Sn, In, or an alloy of these elements, and a B-layer (13) for configuring an intermediate layer provided between the substrate (11) and the A-layer (14), and formed from Ag, Au, Pt, Pd, Ru, Rh, Os, Ir, or an alloy of these elements, wherein the thickness of the outermost layer (A-layer) (14) is 0.002-0.2μm, and the thickness of the intermediate layer (B-layer) (13) is greater than 0.3μm. Cette invention concerne un matériau métallique pour composants électroniques, ledit matériau présentant une faible résistance d'insertion/extraction, un risque réduit de formation de barbes et une haute durabilité. L'invention concerne en outre un procédé de production dudit matériau. Un matériau métallique (10) pour composants électroniques, comprend un substrat (11), une couche A (14) formant la couche la plus extérieure du substrat (11) et faite de Sn, In, ou d'un alliage de ceux-ci, et une couche B (13) formant une couche intermédiaire disposée entre le substrat (11) et la couche A (14) et faite d'Ag, Au, Pt, Pd, Ru, Rh, Os, Ir, ou d'un alliage de ceux-ci. L'épaisseur de la couche la plus extérieure (couche A) (14) va de 0,002 à 0,2 μm, et l'épaisseur de la couche intermédiaire (couche B) (13) est supérieure à 0,3 μm.